BFY183(2011) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BFY183
(Rev.:2011)

HiRel NPN Silicon RF Transistor

Infineon Technologies 

Electrical Characteristics (continued)

BFY183

Parameter

DC Characteristics

Base-Emitter forward voltage

IE = 30 mA, IC = 0

DC current gain

IC = 5 mA, VCE = 6 V

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 500 MHz

IC = 25 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Emitter-base capacitance

VEB = 0.5V, VCB = vcb = 0, f = 1 MHz

Noise Figure

IC = 8 mA, VCE = 5 V, f = 2 GHz,

ZS = ZSopt

Power gain

IC = 20 mA, VCE = 5V, f = 2 GHz

ZS = ZSopt , ZL= ZLopt

Transducer gain

IC = 20 mA, VCE = 5 V, f = 2 GHz

ZS = ZL = 50 

Output Power

IC = 30 mA, VCE = 5 V, f = 2GHz ,

PIN=7dBm

ZS = ZL = 50 

Notes.:

Symbol

min.

Values

Unit

typ. max.

VFBE

hFE

-

-

55

90

1

V

160 -

fT

GHz

6,5

7.5

-

-

8

-

CCB

-

0.32 0.44 pF

CCE

-

0.34 -

pF

CEB

-

1.1

1.4 pF

F

-

2.3

2.9 dB

Gma 1.) 12.5 14

-

dB

|S21e|2

9

10,5 -

dB

POUT

13.5 14.5 -

dBm

1)

Gma



S21 (k 

S12

k 2  1) ,

Gms



S 21

S12

IFAG IMM RPD D HIR

3 of 4

V2, February 2011

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