HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4M x 4-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 ˚C
Storage temperature range.........................................................................................– 55 to 150 ˚C
Input/output voltage ........................................................................... – 0.5 to min (VCC + 0.5, 4.6) V
Power supply voltage................................................................................................– 0.5 V to 4.6 V
Power dissipation.................................................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics (values in brackets for HYB 3117400)
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Input high voltage
VIH
Input low voltage
VIL
TTL Output high voltage (IOUT = – 2 mA)
VOH
TTL Output low voltage (IOUT = 2 mA)
VOL
CMOS Output high voltage (IOUT = –100 µA) VOH
CMOS Output low voltage (IOUT = 100 µA)
VOL
Input leakage current
II(L)
(0 V ≤ VIH ≤ VCC + 0.3 V, all other pins = 0 V)
Output leakage current
IO(L)
(DO is disabled, 0 V ≤ VOUT ≤ VCC + 0.3 V)
Average VCC supply current:
ICC1
-50 ns version
-60 ns version
-70 ns version
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current (RAS = CAS = VIH) ICC2
Average VCC supply current, during RAS-only ICC3
refresh cycles:
-50 ns version
-60 ns version
-70 ns version
(RAS cycling: CAS = VIH, tRC = tRC min.)
2.0
– 0.5
VCC + 0.5
0.8
2.4
–
–
0.4
VCC – 0.2 –
–
0.2
– 10
10
– 10
10
–
100(120)
–
90 (110)
–
80 (100)
–
2
–
100(120)
–
90 (110)
–
80 (100)
Unit Test
Condition
V
1)
V
1)
V
1)
V
1)
V
V
µA 1)
µA 1)
mA 2) 3) 4)
mA 2) 3) 4)
mA 2) 3) 4)
mA –
mA 2) 4)
mA 2) 4)
mA 2) 4)
Semiconductor Group
6