PMBT6428 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PMBT6428 Datasheet PDF : 8 Pages
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NXP Semiconductors
NPN general purpose transistors
Product data sheet
PMBT6428; PMBT6429
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBE
Cc
Ce
fT
collector cut-off current
IE = 0; VCB = 30 V
−
emitter cut-off current
IC = 0; VEB = 5 V
−
DC current gain
IC = 0.1 mA; VCE = 5 V
PMBT6428
250
PMBT6429
500
DC current gain
PMBT6428
IC = 1 mA; VCE = 5 V
250
PMBT6429
500
DC current gain
PMBT6428
IC = 10 mA; VCE = 5 V
250
PMBT6429
500
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
IC = 100 mA; IB = 5 mA
−
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
IC = 1 mA; VCE = 5 V
560
IE = ie = 0; VCB = 10 V; f = 1 MHz −
IC = ic = 0; VEB = 0.5 V; f = 1 MHz −
IC = 1 mA; VCE = 5 V; f = 100 MHz 100
MAX.
10
10
UNIT
nA
nA
650
1 250
−
−
−
−
200
mV
600
mV
660
mV
3
pF
12
pF
700
MHz
2004 Jan 22
4
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