MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G, SMUN5313DW1T1G
PNP TRANSISTOR
1
IC/IB = 10
0.1
1000
TA = -25°C
25°C
75°C
100
TA = 75°C
25°C
-25°C
0.01
0
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
10
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
100
f = 1 MHz
lE = 0 V
TA = 25°C
10
1
TA = 75°C
25°C
-25°C
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 29. Output Capacitance
0.1
0.01
VO = 5 V
0.001
50
0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 30. Output Current versus Input Voltage
100
VO = 0.2 V
TA = -25°C
25°C
10
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
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