SMUN5312DW1T1G View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
SMUN5312DW1T1G Datasheet PDF : 34 Pages
| |||
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G, SMUN5312DW1T1G
PNP TRANSISTOR
10
IC/IB = 10
1000
VCE = 10 V
1
25°C
TA = -25°C
100
75°C
0.1
TA = 75°C
25°C
-25°C
0.01
0
4
3
2
1
0
0
20
40
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
10
50
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
f = 1 MHz
lE = 0 V
TA = 25°C
100
75°C 25°C
TA = -25°C
10
1
0.1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
0.01
VO = 5 V
50
0.001 0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 20. Output Current versus Input Voltage
100
VO = 0.2 V
TA = -25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
http://onsemi.com
9
Share Link: 