2SC5050 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SC5050

Silicon NPN Epitaxial

Renesas Electronics 

2SC5050

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

8

V

1.5

V

50

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector to base breakdown

voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

S21 Parameter

Symbol Min

V(BR)CBO

15

I CBO

—

I CEO

—

I EBO

—

hFE

50

Cob

—

fT

8.0

|S21| —

Power gain

PG

11.0

Noise figure

NF

—

Typ

—

—

—

—

120

0.6

11.0

13.5

14.0

1.1

Max

—

10

1

10

250

1.1

—

—

—

2.0

Unit

V

µA

mA

µA

pF

GHz

dB

dB

dB

Test conditions

IC = 10 µA, IE = 0

VCB = 12 V, IE = 0

VCE = 8 V, RBE =

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 20 mA

VCB = 5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 20 mA

VCE = 5 V, IC = 20 mA,

f = 1000 MHz

VCE = 5 V, IC = 20 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

See characteristic curves of 2SC4926.

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