MXP1152 View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
MXP1152 Datasheet PDF : 1 Pages
| |||
2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
MXP1152
NPN Photo Transistor Hybrid Optocoupler
Features
• Small size
B
• Gold thick film bonding pads
A
• Custom input and output versions
C
• Low input current operation
Applications
• Solid state relays
• Switching power supplies
• CMOS drivers
C
• Light meters
E
Electrical Characteristics @ 25oC
SYMBOL
CHARACTERISTIC
CONDITIONS
MIN TYP MAX UNITS
CTR
Current Transfer Ratio
IF = 10 mA, VCE = 5.0 V 50 100
%
VCE(SAT) Collector-Emitter Saturation Voltage IF = 10 mA, IC = 1.0 mA
0.25
Volts
BVCEO Collector-Emitter Voltage
IC = 100 uA
20
Volts
ICEO
Collector-Emitter Leakage Current VCE = 20 V
100 nAmps
VF
Input Forward Voltage
IF = 10 mA
0.85 1.2 1.95 Volts
IR
Input Reverse Current
VR = 3.0 V
100 uAmps
T(on)
Turn-On Time
IF = 20 mA, VCE = 5 V,
RL = 100 Ohms
30 usec
Notes:
A
1
Collector 1. Fritless gold over Pt-Au or Pd-Au metallization
2. Pt-Au or Pd-Au metallization
1
C1
2
.105
1
Base .085
1
Emitter
hybrid substrate size
0.105 x 0.085 inch
wirebond contact size
0.010 x 0.010 inch
Data Sheet # MSC
Updated:May 1999
Opto Products
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