BCW69 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BCW69 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistors
Product specification
BCW69; BCW70
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
BCW69
BCW70
DC current gain
BCW69
BCW70
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
fT
transition frequency
F
noise figure
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
MIN.
IE = 0; VCB = −20 V
−
IE = 0; VCB = −20 V; Tj = 100 °C −
IC = 0; VEB = −5 V
−
IC = −10 µA; VCE = −5 V
−
−
IC = −2 mA; VCE = −5 V
120
215
IC = −10 mA; IB = −0.5 mA
IC = −50 mA; IB = −2.5 mA; note 1
IC = −10 mA; IB = −0.5 mA
IC = −50 mA; IB = −2.5 mA; note 1
IC = −2 mA; VCE = −5 V
IE = Ie = 0; VCB = −10 V; f = 1 MHz
IC = −10 mA; VCE = −5 V;
f = 100 MHz
−
−
−
−
−600
−
100
IC = −200 µA; VCE = −5 V;
−
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
TYP.
−
−
−
90
150
−
−
−80
−150
−720
−810
−
4.5
−
−
MAX. UNIT
−100 nA
−10 µA
−100 nA
−
−
260
500
−300
−
−
−
−750
−
−
mV
mV
mV
mV
mV
pF
MHz
10
dB
1999 Apr 19
3
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