BUK98150-55A(2007) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BUK98150-55A Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK98150-55A
N-channel TrenchMOS logic level FET
25
ID
10
(A)
8
20
003aab631
VGS = 6 (V)
140
RDSon
(mΩ)
003aab632
5
15
4.6
4.2
4.0
10
3.6
3.4
3.2
5
3.0
2.6
2.2
0
0
2
4
6
8
10
VDS (V)
120
100
80
0
5
10 VGS (V) 15
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C; ID = 5 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
300
RDSon
(mΩ)
003aab633
VGS = 3 (V)
3.2
3.4 3.6
200
3.8
4
5
10
100
2
4
6
8 ID (A) 10
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
2
03nc24
a
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100 140 180
Tj (°C)
a = -R---D----RS---o-D--n--S(--2o--5-n--°--C----)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK98150-55A_4
Product data sheet
Rev. 04 — 11 June 2007
© NXP B.V. 2007. All rights reserved.
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