2SC1501 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SC1501

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=100μA;IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=100μA; IC=0

VCEsat Collector-emitter saturation voltage IC=100mA IB=10m A

VBE

Base-emitter on voltage

IC=50mA ; VCE=10V

hFE-1

DC current gain

IC=10mA ; VCE=10V

hFE-2

DC current gain

IC=50mA ; VCE=10V

ICBO

Collector cut-off current

VCB=300V ; IE=0

COB

Output capacitance

IE=0; VCB=30V;f=1MHz

fT

Transition frequency

IE=20mA ; VCB=30V

‹ hFE-2 classifications

P

Q

R

S

30-60 50-100 80-150 100-200

Product Specification

2SC1501

MIN TYP. MAX UNIT

300

V

300

V

5

V

5.0

V

1.2

V

30

30

200

100 μA

8

pF

55

MHz

2

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