B1016 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
B1016 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -4A; IB= -0.4A
VsE(on) Base-Emitter On Voltage
lc= -4A; VCE= -5V
ICBO
Collector Cutoff Current
VCB=-100V; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
lc= -1A; VCE= -5V
hFE-2
DC Current Gain
|c= -4A; VCE= -5V
COB
Output Capacitance
lE=0;VCB=-10V;f=1MHz
ft
Current-Gain—Bandwidth Product
lc= -1A; VCE= -5V
• hpE-1 Classifications
R
0
Y
40-80 70-140 120-240
2SB1016
MIN TYP. MAX UNIT
-100
V
-2.0 V
-1.5 V
-100 u A
-1.0 mA
40
240
20
270
PF
5
MHz
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