2SD1255 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SD1255

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SD1255

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3.0A; IB= 0.15A

ICBO

Collector Cutoff Current

VCB= 150V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 0.1A ; VCE= 2V

hFE-2

DC Current Gain

IC= 1A ; VCE= 2V

fT

Current-Gain—Bandwidth Product

IC=0.5A ; VCE= 10V

MIN TYP. MAX UNIT

130

V

0.5

V

1.5

V

50 μA

50 μA

45

90

260

30

MHz

 hFE-2Classifications

Q

P

90-180

130-260

isc website：www.iscsemi.com

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