SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA963
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-2mA;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-150mA
VBEsat
Base-emitter saturation voltage
IC=-2A ;IB=-0.2A
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
COB
Output capacitance
VCB=-20V; IE=0
VCE=-10V; IB=0
VEB=-5V; IC=0
IC=-1A ; VCE=-5V
IE=0 ; VCB=-5V;f=1MHz
fT
Transition frequency
IE=0.5A ; VCB=-5V,f=200MHz
MIN TYP. MAX UNIT
-40
V
-50
V
-1.0
V
-1.5
V
-1
µA
-100 µA
-10 µA
80
220
70
pF
150
MHz
hFE Classifications
Q
R
80-160
120-220
2