2SA656 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SA656 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)GEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -1A
VsE(sat) Base-Emitter Saturation Voltage
lc= -5A; IB= -1A
ICBO
Collector Cutoff Current
VCB=-130V; le=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
lc= -1A; VCE= -5V
hFE-2
DC Current Gain
lc= -5A; VCE= -5V
COB
Collector Output Capacitance
lE=0;VCB=-10V;f=1MHz
fr
Current-Gain—Bandwidth Product
lc=-1A;VCE=-10V
2SA656
MIN TYP. MAX UNIT
-110
V
-2.0
V
-2.5
V
-0.1 mA
-5
mA
30
300
15
150
pF
5
MHz
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