2SB944 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB944 Datasheet PDF : 2 Pages
| |||
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB944
DESCRIPTION
• Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@ |c= -3A
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V (Min)
• Good Linearity of hFE
• Complement to Type 2SD1269
f
1> J
2
2 Collector
3 Emitter
TO-220Fa package
APPLICATIONS
• Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
Ic
Collector Current-Continuous
-A
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25°C
PC
Collector Power Dissipation
@ Ta=25'C
Tj
Junction Temperature
-8
A
35
W
2
150
°C
Tstg
Storage Temperature Range
-55-150
"C
*-<
*U *
-
T
/i
'
i
i
H
t
1;
i—
rf
I
r T »^
^
ND
mm
DIM MIN
A 16.85
B
9.54
C
4,35
D
0,75
F
3,20
G
6.90
H
5,15
J
0.45
K 13.35
L
1.10
N
4.98
Q 4.8S
R
2.55
S 270
U
1,75
V
1.30
MAX
17.15
10.10
4.65
0.90
3.40
7,20
5.45
0.75
13.65
1,30
5.1S
5.15
3.25
2.90
2.05
1.50
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions\\ithout
notice, Infbnnation furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time ofguii
K> press. I luuevcr. NJ Semi-Condtictors assumes no responsibilit} for an> errors or omission discovered in its use
N.I Semi-ConJuclors encourages customers to verily that datasheets are current before placiim orders.
Quality Semi-Conductors
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