2SB944 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB944 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SB944
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA; IB= 0
-80
V
VcE(sat) Collector-Emitter Saturation Voltage lc=-3A; IB=-0.15A
-0.5
V
VeE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
lc=-3A; IB=-0.15A
VCB=-100V; IE=0
-1.5
V
-10 u A
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-50 M A
hpE-1
DC Current Gain
IC=-0.1A;VCE=-2V
45
hFE-2
DC Current Gain
lc= -1A; VCE= -2V
90
260
fi
Current-Gain—Bandwidth Product
lc= -0.5A; VCE= -10V; f= 10MHz
30
MHz
Switching times
ton
Turn-on Time
lstg
Storage Time
tf
Fall Time
lc=-1A;lBi=-lB2=-0.1A
0.15
US
0.8
us
0.15
Ms
hpE-2 classifications
Q
P
90-180
130-260
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