2SB992 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB992 Datasheet PDF : 2 Pages
| |||
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB992
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -SOV(Min)
• Collector Power Dissipation-
: Pc= 40W@ Tc= 25'C
• Low Collector Saturation Voltage-
: VCE(sa.)= -0.5V(Max)@ lc= -4A
• Complement to Type 2SD1362
, ,-..,,
2
1 . '.
i! "
PIH: 1 Base
2 Collector
3 Knitter
TO-220C package
APPLICATIONS
• High current switching applications.
• Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25t:)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-7
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25°C
PC
Collector Power Dissipation
@Tc=25t:
Tj
Junction Temperature
Tstg
Storage Temperature
-1
A
1.5
W
40
150
°C
-55-150 °c
•« B ••*-
*S
fs~\
'1?
A
•r
T»
» H • j,|
K
T
rv**IU D
1f
-
C
A
mm
DIN WIN MAX
A 15.50 15.90
B 9.90 10.20
C 4.20 4.50
D 0.70 0.90
F 3.40 3.70
0 4.98 5.18
H 2.68 2.90
J 0.44 0.60
K 13. 00 13.40
L 1.10 1.45
Q 2.70 2.90
R 2.30 2.70
S 1.29 1.35
u 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\ithout
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going
to press, lltmever, N.I Semi-Condiietors assumes no responsibility for any errors or omissions discovered in its use.
N.I Seiill-Conduclois encourages customers to verify that datasheets are cimvnl before placiim orders.
Quality Semi-Conducfors
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