2SB992 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB992 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -4A; IB= -0.4A
Vee(sai) Base-Emitter Saturation Voltage
|c= -4A; IB= -0.4A
ICBO
Collector Cutoff Current
VCB=-100V; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
lc= -1A; VCE= -1V
hFE-2
DC Current Gain
lc= -4A; VCE= -1V
COB
Output Capacitance
lE=0;VCB=-10V;f,esr 1MHz
fr
Current-Gain—Bandwidth Product
Switching Times
lc= -1A; VCE= -4V
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
Vcc- -30V, RL=10n,
IB1= -lB2= -0.3A,
• hpE-1 Classifications
0
Y
70-140
120-240
2SB992
MIN TYP. MAX UNIT
-80
V
-0.5
V
-1.4 V
-5 u A
-5 U A
70
240
30
250
PF
10
MHz
0.4
us
2.5
Ms
0.5
Us
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