2SA1667 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SA1667 Datasheet PDF : 2 Pages
| |||
-M
»J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1667
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)cEo=-150V(Min)
• DC Current Gain-
: hFE= 60(Min)@ (VCE= -10V, lc= -0.7A)
• Complement to Type 2SC4381
APPLICATIONS
• Designed for TV vertical output .audio output driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25^C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
-150
V
VEBO Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-2
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature
-1
A
25
W
150
°C
-55-150 r
PIN I. BASE
2.COLLECTOR
3. BETTER
2I
TO-220F package
B
- c-
-s-
•
:9
u
f ',
A
L--
H
- R-
K
- -D
- N-
J --
mm
DIM WIN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.90
F 3.10 3.30
H 3.70 3.90
j 0.50 0.70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
Q 2.70 2.90
R 2.20 2.40
S 2.65 2.90
u 6.40 6.60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. "
NJ Semi-Conductorsencourages customers to verity that datasheets are current before placing orders.
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