2SC2248 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC2248 Datasheet PDF : 2 Pages
| |||
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2248
DESCRIPTION
• High Collector-Emitter Sustaining Volt^ge-
: VCEO(susr 400V (Min)
• High Switching Speed
APPLICATIONS
• Power switching
• Power amplification
• Power driver
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
MAX
UNIT
VCBO Collector-Base Voltage
450
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
T,
Junction Temperature
Tstg
Storage Temperature Range
3
A
40
W
175
"C
-65-175 •c
I
1
V^
fX.
'
PIN 1 BASE
2.B4ITTER
3. COLLECTOR (CASE)
TO-66 package
H
ci
i
LE
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\~ V>x^<^/*'?
Jt
Cr
LK
OS
jt
,B
I C
t
'-ES
\ — ±t ™»J Mini
[KM MM MAX
A 31.40 31.80
B 17.30 17.70
C 6.70 7,10
D 0,70 0,90 j
E 1.40 1.60_,
0
5.Cts
H
2.S4
Jl 9-W 10.20
L 14.70 14.90
N 12,40 12.60
i "ieo 3^0
It 24.30 24.SO
\[_ 3.SO 3.70
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Condiietors is believed to be both accurate and reliable at the time ofcoi.
to press. I louever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
N.I Semi-Coiidiiclors encourages customers to verify that datasheets are current belbre placing orders.
Qualiry Semi-Conductors
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