2SB1096 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2SB1096

Silicon PNP Power Transistor

New Jersey Semiconductor 

, One.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB1096

DESCRIPTION

• High Collector Current:: lc= -2A

• Good Linearity of hFE

• Complement to Type 2SD1587

APPLICATIONS

• Designed for color TV vertical deflection output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE UNIT

f

1 23

2 Collector

3 Enitter

TO-220F& package

, iu —

tL

rf

•/

, . //

'••i. '

VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage

VEBO Emitter-Base Voltage

Ic

Collector Current-Continuous

I CM

Collector Current-Pulse

IB

Base Current-Continuous

Total Power Dissipation

@ Ta=25°C

PC

Total Power Dissipation

@ TC=25'C

Tj

Junction Temperature

Tstg

Storage Temperature Range

-200

V

-150

V

-5

V

-2

A

-3

A

-1.0

A

2

W

25

150

•c

-55-150 "C

H

T

t;

*• ••"L

*-: -*-V

•

—"•-J

— R—

^c^*

*.— o

mm

DIM WIN

A 16.85

B 3.54

C 4.35

D 0.75

F 3.20

G 6.90

H 5.15

J 0.45

K 13.35

L 1.10

N 4.98

Q 4.85

R 2,65

S 2,70

u 1,75

V 1.30

MAX

17.15

10.10

4.65

0.90

3,40

7,20

5,45

0.75

13.65

1,30

5.18

5.15

3.25

2.90

2.05

1.50

N.I Soiin'-CiiiKluctors reserves the right to change test conditions, parameter limits aticl package dimensions without

notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going

10 press. I Inucver, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.

N.I Scmi-Condiiclors encourages customers to verily tliul datasheets are current before placing orders.

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