2SB1075 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB1075 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1075
DESCRIPTION
• High Collector Current -lc= -2A
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -40V(Min.)
• Good Linearity of hFE
• Low Collector Saturation Voltage
:VCE(sat)=-1.0V(Max.)@lc=-3A
APPLICATIONS
• Designed for AF output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-40
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-2
A
ICP
Collector Current-Pulse
Collector Power Dissipation
PC
@ Ta=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-4
A
1.2
W
150
•c
-55-150
r
•:
|
22
^FIH:1 E.itter
2 Collector
3 Base
TO- 126 package
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iT A
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mm
DIM WIN MAX
A 10.70 10.95
B 7.70 7.90
C 2.60 2.30
D 0,66 0.86
F 3,10 3.30
G 4.48 4.68
H 2.00 2.20
4 1.35 1.55
K 15.30 16.30
0 3.70 3.90
R 0.40 0.60
V 1.17 1.37
N.I Semi-Conductors reserves the right lo change test conditions, parameter limits and package dimensions \\ithout
notice. Information furnished h> N.I Semi-Conductors is believed to he hoth accurate and reliable at the time of goiiu
to press. I Kwever, N.I Semi-Coiiductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verily that datasheets are current before plneinu orders.
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