2SB1341 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB1341 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
2SB1341
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
WIN TYP. MAX UNIT
VIBRICEO Collector-Emitter Breakdown Voltage. lc= -1mA; IB= 0
-80
V
V(8R)CBO Collector-Base Breakdown Voltage
lc= -50u A; IE= 0
-80
V
VcE(sat) Collector-Emitter Saturation Voltage lc= -2A; IB= -4mA
-1.5
V
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= -80V; IE= 0
VEB= -5V; lc= 0
-100 M A
-3
mA
hpE
DC Current Gain
lc= -2A ; VCE= -3V
1000
10000
COB
Output Capacitance
lE=0;VcB=-10V;ftest=1MHz
45
PF
fi
Current-Gain—Bandwidth Product
IE= 0.5A ; VCE= -5V; f(est= 10MHz
12
MHz
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