B1097 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
B1097 Datasheet PDF : 2 Pages
| |||
, Una,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1097
DESCRIPTION
• High Collector Current:: lc= -7A
• Low Collector Saturation Voltage
: VCE(sa«)= -0.5V(Max)@lc= -5A
• Complement to Type 2SD1588
APPLICATIONS
• Designed for low-frequency power amplifiers and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
^^m
2
III
[f
1 1i
, ?3
FIH: 1 Base
2 Collector
3 Emitter
TO-220Fa package
•*— a—- - ^ s -
•—
-. {3-«-
». .
/
-
fi
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
-80
V
,
t
-60
V
1C
•» -«-V
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
ICM
Collector Current-Pulse
IB
Base Current-Continuous
Total Power Dissipation
@ Ta-25'C
PC
Total Power Dissipation
@ TC=25"C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-7
V
-7
A
-15
A
-3.5
A
2
W
30
150
r
-55-150
r
*— J
»--
P-
mm
DIM MINI MAX
A 16.85 17.15
B S £4 110 10
C 4.35 4.65
D 0.75 O.M
p 3.20 340
G 6,90 7.2G
H 5.1 S 5.45
j 0.45 0.75
K 1X35 13,65
L 1.10 1.30
H 438 5.18
Q 4.SS 5,15
R 2.66 3.25
c 270 290
y 1.75 2.05
V 1.30 1.50
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions uithout
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of yoint:
lo press. I louescr. N.I Semi-C'ondiietors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encoura.ues customers to \erify that datasheets are current before placing orders.
Quality Semi-Conductors
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