2SB1021 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB1021 Datasheet PDF : 2 Pages
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Silicon PNP Darlingtion Power Transistor
2SB1021
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
-80
V
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= -3A; IB= -6mA
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= -7A; IB= -14mA
VsE(sat) Base-Emitter Saturation Voltage
lc= -3A; IB= -6mA
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
-1.5
V
-2.0
V
-2.5
V
-100
UA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-4.0
mA
hpE-1
DC Current Gain
lc= -3A; VCE=-3V.
2000
15000
hpE-2
DC Current Gain
lc= -7A; VCE= -3V
1000
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= -3.0A ,IB1= -lB2= -6rnA,
Voc« -45V; RL=15n
0.8
us
2.0
us
2.5
Ms
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