2SB1073 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SB1073 Datasheet PDF : 3 Pages
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Transistors
2SB1073
Silicon PNP epitaxial planar type
For low-frequency amplification
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Large peak collector current ICP
• Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
0.4±0.04
/ ■ Absolute Maximum Ratings Ta = 25°C
45˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
−30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
−20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
−7
V
a e cle con Collector current
IC
−4
A
lifecy , dis Peak collector current
ICP
−7
A
n u duct typed Collector power dissipation *
PC
1
W
te tin Pro ed Junction temperature
Tj
150
°C
ur tinu Storage temperature
Tstg −55 to +150 °C
ing fo iscon Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
in n llow d d thickness of 1.7 mm for the collector portion
3.0±0.15
Marking Symbol: I
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
a o includestyfpoe, plane ■ Electrical Characteristics Ta = 25°C ± 3°C
c tinued ance Parameter
Symbol
Conditions
Min
M is con inten Collector-base voltage (Emiter open) VCBO IC = −10 µA, IE = 0
−30
/Dis ma Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−20
D ance type, Emiter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−7
ten ce Collector-base cutoff current (Emitter open) ICBO VCB = −30 V, IE = 0
Main tenan Emitter-base cutoff current (Collector open) IEBO VEB = −7 V, IC = 0
ain Forward current transfer ratio *1, 2
hFE VCE = −2 V, IC = −2 A
120
ed m Collector-emitter saturation voltage *1 VCE(sat) IC = −3 A, IB = − 0.1 A
(plan Transition frequency
fT
VCB = −6 V, IE = 50 mA, f = 200 MHz
Typ Max
− 0.6
120
− 0.1
− 0.1
315
−1.0
Unit
V
V
V
µA
µA
V
MHz
Collector output capacitance
Cob VCB = −20 V, IE = 0, f = 1 MHz
40
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
120 to 205 180 to 315
Publication date: March 2004
SJC00068DED
1
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