2SC2921 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2SC2921

Silicon NPN Power Transistor

New Jersey Semiconductor 

zSs.mi-Condu.cto'i ^-P

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Una.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC2921

DESCRIPTION

• Collector-Emitter Breakdown Voltage- -.

V(BR)CEO= 160V(Min)

• High Power Dissipation

• Complement to Type 2SA1215

APPLICATIONS

• For audio and general purpose applications

PIN 1.BASE

2.COLLECTOR

3.BWIITTER

MT-200 package

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

5

V

Ic

Collector Current-Continuous

15

A

IB

Base Current-Continuous

Collector Power Dissipation

PC

@ Tc=25r

Tj

Junction Temperature

4

A

150

W

150

°C

Tstg

Storage Temperature Range

-55-150

"C

mm

DIM WIN

A 21.00

B 35,80

r

5.60

D 1.04

F 3.10

G 1.90

H 3.60

J 0,55

K 20,00

L 2.9Q.

N 10,50

Q 24.00

R 2.90

S 2.00

Li 6.90

Y J 3,90

MAX

21.70

36-70

6.20

1.07

3-50

2,40

4.00

0,85

20. SO

3.4O

11,10

24. .SO

3,30

2.20

7.10

9.10

N.I Semi-Coiidiietors reserves the right to change lest conditions, parameter limits and package dimensions without

niMice. Information furnished by NJ Semi-Conductors is helie\ed to he holh accurate and reliable at the time of miii

lo press. I lo\\e\er, N.I Semi-Coiidiietors assumes no responsihilily lor an> errors or omissions discovered in its u>e.

N.I Senii-C'oiulticlors eiiciuiriij-cs cii->lomers lo verily that datasheets are currenl helbre placing orders.

Qualihy Semi-Conducfors

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