2SC3619 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SC3619

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)

Toshiba 

Electrical Characteristics (Tc = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

IEBO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

fT

Cob

VCB = 240 V, IE = 0

VEB = 7 V, IC = 0

VCE = 10 V, IC = 4 mA

VCE = 10 V, IC = 20 mA

IC = 10 mA, IB = 1 mA

IC = 10 mA, IB = 1 mA

VCE = 10 V, IC = 20 mA

VCB = 20 V, IE = 0, f = 1 MHz

Marking

2SC3619

Min Typ. Max Unit

―

―

1.0

μA

―

―

1.0

μA

20

―

―

30

―

200

―

―

1.0

V

―

―

1.0

V

50

―

― MHz

―

3.0

―

pF

Lot No.

C3619

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

2

2006-11-09

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