2SA1952 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SA1952

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SA1952

DESCRIPTION

·Low Collector Saturation Voltage

:VCE(sat)= -0.3(V)(Max)@IC= -3A

·High Switching Speed

·Complement to Type 2SC5103

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for high current switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

-100

V

VCEO Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

PC

Total Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-5

A

10

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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