HYB5118165BJ-70 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

HYB5118165BJ-70

1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO)

Infineon Technologies 

1M x 16-Bit Dynamic RAM

1k & 4k Refresh

(Hyper Page Mode- EDO)

HYB5116165BSJ -50/-60/-70

HYB5118165BSJ -50/-60/-70

Advanced Information

• 1 048 576 words by 16-bit organization

• 0 to 70 °C operating temperature

• Performance:

tRAC

tCAC

tAA

tRC

tHPC

RAS access time

CAS access time

Access time from address

Read/Write cycle time

Hyper page mode (EDO)

cycle time

-50 -60 -70

50 60 70 ns

13 15 20 ns

25 30 35 ns

84 104 124 ns

20 25 30 ns

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 1100 active mW ( HYB5118165BSJ-50)

max. 990 active mW ( HYB5118165BSJ-60)

max. 880 active mW ( HYB5118165BSJ-70)

max. 550 active mW ( HYB5116165BSJ-50)

max. 495 active mW ( HYB5116165BSJ-60)

max. 440 active mW ( HYB5116165BSJ-70)

11 mW standby (TTL)

5.5. mW standby (MOS)

• Output unlatched at cycle end allows two-dimensional chip selection

• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh

and Self Refresh

• Hyper page mode (EDO) capability

• All inputs, outputs and clocks fully TTL-compatible

• 1024 refresh cycles / 16 ms for HYB5118165BSJ (1k-Refresh)

• 4096 refresh cycles / 64 ms for HYB5116165BSJ (4k-Refresh)

• Plastic Package:

P-SOJ-42-1 400 mil

Semiconductor Group

1

1.96

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