2N6316 View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
Manufacturer
2N6316 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6315 2N6316
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6315
2N6316
IC=0.1A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4 A
VCEsat-2 Collector-emitter saturation voltage IC=7A; IB=1.75A
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.75A
VBE
Base-emitter on voltage
IC=2.5A ; VCE=4V
2N6315 VCE=30V; IB=0
ICEO
Collector cut-off current
2N6316 VCE=40V; IB=0
2N6315 VCB=60V; IE=0
ICBO
Collector cut-off current
2N6316 VCB=80V; IE=0
ICEX
Collector cut-off current
VCE=Rated VCE; VBE(off)=1.5V
TC=150
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=4V
hFE-2
DC current gain
IC=2.5A ; VCE=4V
hFE-3
DC current gain
IC=7A ; VCE=4V
fT
Transition frequency
IC=0.25A;VCE=10V;f=1.0MHz
MIN TYP. MAX UNIT
60
V
80
1.0
V
2.0
V
2.5
V
1.5
V
0.5
mA
0.25 mA
0.25
2.0
mA
1.0
mA
35
20
100
4
4
MHz
2
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