2N6535 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N6535 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25D unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-emitter sustaining voltage lc=0.2A ;|B=0
VcEsat-1 Collector-emitter saturation voltage lc=3A;lB=6mA
VcEsat-2 Collector-emitter saturation voltage lc=8A; !B=80mA
VBE-I
Base -emitter on voltage
lc=3A ; VcE=3V
VflE-2
Base -emitter on voltage
ICEV
Collector cut-off current
ICEO
Collector cut-off current
lc=8A ; VCE=3V
VCE=100V;VBE=-1 5V
Tc=125L
VcE=100V; IB=0
IEBO
Emitter cut-off current
Vee=5V; lc=0
hpE-1 DC current gain
lc=3A ; VCE=3V
hpE-2
DC current gain
lc=8A ; VCE=3V
VF
Diode forward voltage
IF=5A
2N6535
MIN
TYP.
MAX UNIT
100
V
2.0
V
3.0
V
2.8
V
4.5
V
0.5
5.0
mA
1.0
mA
5.0
mA
500
10000
100
5000
4.0
V
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