NTE352 View Datasheet(PDF) - NTE Electronics

Part Name

Description

Manufacturer

NTE352

Silicon NPN Transistor RF Power Amp, Driver

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Dynamic Characteristics

Output Capacitance

Cob VCB = 15V, IE = 0, f = 0.1MHz

Functional Tests (VCC = 12.5V unless otherwise specified)

– 235 300 pF

Common–Emitter Amplifier

Power Gain

GPE Pout = 75W, f = 175MHz

7.0 8.5 – dB

Collector Efficiency

Load Mismatch

η

Pout = 75W, f = 175MHz

Pout = 75W, f = 175MHz,

VSWR = 30:1, All Phase Angles

55 60 – %

No Degradation in

Output Power

.405

(10.3)

Min

.205 (5.18)

E

B

.215 (5.48)

.122 (3.1) Dia

.500 (12.7) Dia

.005 (0.15)

C

E

.155 (3.94)

.160 (4.06)

.725 (18.43)

.975 (24.78)

.270

(6.85)

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