FDG330P View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDG330P Datasheet PDF : 5 Pages
| |||
Typical Characteristics
6
ID = -2A
5
4
VDS = -4V
-6V
-8V
3
2
1
0
0
2
4
6
8
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
100µs
1ms
10ms
1
100ms
1s
DC
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 260oC/W
TA = 25oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
800
700
600
500
400
300
200
100
0
0
CISS
f = 1 MHz
VGS = 0 V
COSS
CRSS
2
4
6
8
10
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
10
SINGLE PULSE
8
RθJA = 260°C/W
TA = 25°C
6
4
2
0
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 260oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDG330P Rev D (W)
Share Link: 