KSB1017 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

KSB1017

PNP Silicon Epitaxial Transistor

ON Semiconductor 

KSB1017

Power Amplifier Applications

• Complement to KSD1408

1

TO-220F

1.Base 2.Collector 3.Emitter

PNP Silicon Epitaxial Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

IB

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Dissipation ( TC=25°C)

Junction Temperature

Storage Temperature

Value

- 80

- 80

-5

-4

- 0.4

25

150

- 55 ~ 150

Units

V

V

V

A

A

W

°C

°C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCEO

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(on)

fT

Cob

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter ON Voltage

Current Gain Bandwidth Product

Output Capacitance

IC = - 50mA, IB = 0

VCB = - 80V, IE = 0

VEB = - 5V, IC = 0

VCE = - 5V, IC = - 0.5A

VCE = - 5V, IC = - 3A

IC = - 3A, IB = - 0.3A

VCE = - 5V, IC = - 3A

VCE = - 5V, IC = - 0.5A

VCB = - 10V, f = 1MHz

Min.

-80

40

15

Typ.

-1

-1

9

130

Max.

- 30

- 100

240

Units

V

µA

µA

- 1.7

- 1.5

V

V

MHz

pF

hFE Classification

Classification

hFE1

R

40 ~ 80

O

70 ~ 140

Y

120 ~ 240

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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