KSB1149 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
KSB1149 Datasheet PDF : 4 Pages
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KSB1149
Low Collector Saturation Voltage
Built-in Damper Diode at E-C
• High DC Current Gain
• High Power Dissipation : PC=1.3W (Ta=25°C)
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
PC
Collector Dissipation (Ta=25°C)
PC
Collector Dissipation (TC=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle≤50%
- 100
V
- 100
V
-8
V
-3
A
-5
A
1.3
W
15
W
150
°C
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
* DC Current Gain
VCE(sat) * Collector-Emitter Saturation Voltage
VBE(sat) * Base-Emitter Saturation Voltage
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
* Pulse test: PW≤350µs, duty Cycle≤2% Pulsed
VCB = - 100V, IE = 0
VEB = - 5V, IC = 0
VCE = - 2V, IC = - 1.5A
VCE = - 2V, IC = - 3A
IC = - 1.5A, IB = - 1.5mA
IC = - 1.5A, IB = - 1.5mA
VCC = - 40V, IC = - 1.5A
IB1 = - IB2 = - 1.5mA
RL = 27Ω
Min.
2000
1000
Typ.
- 0.9
- 1.5
0.5
2
1
Max.
- 10
-2
20000
Units
µA
mA
- 1.2
V
-2
V
µs
µs
µs
hFE Classification
Classification
hFE1
O
2000 ~ 5000
Y
4000 ~ 12000
G
6000 ~ 20000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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