KSH127 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
KSH127 Datasheet PDF : 3 Pages
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isc Silicon PNP Power Transistor
DESCRIPTION
·High DC current gain
·Built-in a damper diode at E-C
·Electrically similar to popular TIP127
·DPAK for surface mount applications
·Lead formed for surface mount applications(NO suffix)
·Straight lead(IPAK,“－I”suffix)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
Ta=25℃
PC
Collector Power Dissipation
TC=25℃
TJ
Junction Temperature
-16
A
1.75
W
20
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
INCHANGE Semiconductor
KSH127
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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