KSH127 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

KSH127

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

KSH127

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA

VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA

VBE(sat)* Base-Emitter Saturation Voltage

IC=-8A; IB= -80mA

VBE(on)* Base-Emitter On Voltage

IC= -4A; VCE= -4V

V(BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA; IB= 0

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1*

DC Current Gain

IC= -4A; VCE= -4V

hFE-2*

DC Current Gain

IC= -8A; VCE= -4V

COB

Output Capacitance

*:Pulse test PW≤300us,duty cycle≤2%

IE= 0; VCB= -10V; f= 1.0MHz

MIN TYP. MAX UNIT

-2.0 V

-4.0 V

-4.5 V

-2.8 V

-100

V

-10 uA

-2 mA

1K

12K

100

300

pF

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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