DTA124EUA View Datasheet(PDF) - Willas Electronic Corp.

Part Name

Description

Manufacturer

DTA124EUA

PNP Digital Transistor

Willas Electronic Corp. 

WILLAS

FM120-M+

DTA124EUA THRU

PNP Digital Transistor

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

FM1200-M

SOD-123+ PACKAGE

Pb Free Produc

Features

Package outline

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Features • Low profile surface mounted application in order to

optimize board space.

• Pb-Fr•eeLopwapcokwaegr leosiss, haivghaielfafibcileency.

• High current capability, low forward voltage drop.

RoHS•pHriogdhuscurtgfeorcappaacbkiliintyg. code suffix ”G”

SOD-123H

SOT-323 0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

Halog•enGufraerderipngrofodruocvtefrovor lptaagcekpirnogteccotiodne. suffix “H”

• Epoxy•mUelteratshiUghL-s9p4eeVd-0swfliatcmhimnga. bility rating

• Moisur•eSSiliecnonsietipviittayxLiael vpelaln1ar chip, metal silicon junction.

• Built-in• bLieaasdr-efrseiestpoarrstsemneaebtleenthvierocnomnefnigtaulrasttaionndaorfdas nofinverter circuit

withou•t cRMooInHLn-SSepTcrDotid-n1ugc9t5ef0ox0rtep/r2anc2ak8ilnigncpoudterseusffiisxto"Grs"

• The biasHarelosgiesntofrresecporondsuisctt foorf pthaicnk-infiglmcordeessisuftfoixrs"Hw" ith complete

isolatioMn teocahlloawnniecgaaltivdeabtiaasing of the input. They also have the

advantage of almost completely eliminating parasitic effects.

• Only th•eEopno/xoyf:f UcoL9n4d-iVtio0nrastendeefladmtoe rbeetasrdeat nfot r operation, making

device•dCeassigen: Meaolsdyed plastic, SOD-123H

,

Absolute•mTearxmiminaulsm:Prlaatteindgtesrm@in2a5lsк, solderable per MIL-STD-750

0.031(0.8) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

.010(0.25)

.003(0.08)

0.031(0.8) Typ.

Symbol

MPeatrhaomde2te0r26

Min Typ Max Unit

VCC • SPuoplpalryitvyo:ltIangdeicated by cathode band --- -50 ---

V

Dimensions in inches and.0(m87ill(im2.e2t0e)rs)

VIN

IO

IC(MAX)

•

Input voltage

Mounting Posi

tion

:

Any

-40

•

Output current

Weight : Approximat

ed

0.011

gram

---

---

-30

-100

10

---

V

mA

.070(1.80)

Pd

Power dissipation

--- 200 ---

mW

Tj

JunctionMteAmXpeIMraUturMe RATINGS AND E---LEC1T5R0ICA-L--CHARćACTERISTICS

TRstgatings aStto2r5a℃ge taemmbpieernattuteremperature unless other-w55ise spe--c-ified.150

ć

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

Electrical Characteristics @ 25к

RATINGS

SyVVMMmII((aaboofnrxfo))kimilnugmCoRIndepecuutrvreonlttaPgeeaP((kVVaRCOrCa=e=mv--0e5e.r2VstVee, r,IVOI=Oo=-lt1a-50gm0e­A)A)

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-.M0H56F(1M.14800)-MH FM1100-MH FM1150-MH FM1200-M

Min Typ

-0.5 ---

--V- RRM ---

1220M--3a-.-x0

1330UnVVit

14

40

15

50

16 .047(1.2108)

60

80

10

100

115 120

150

200

VMOa(oxn)imum ROMutSpuVtovltoalgtaeg= e (IO/II -10mA/-0.5mA

--V- RMS --- 14 -0.3 21 V 28

35

42

56

70

105

140

MIaI xim= um DInCpuBtloccukrrinegntV(oVlIta-g5eV)

IO(off)

Output current (VCC= =-50V, VI 0)

MGaIximum ADvCercaugrereFnotrgwaainrd(RVOe=ct-i5fiVe= d, ICOu-r5remnAt )

---VDC

---

---

---

20 -0.36 30 mA

-0.5 ­A

40

50

60

80

100

150

200

56 IO ---

---

.004(0.10)1M.0AX.

RPR2e/R1ak1

Input resistance

ForwaRrdesSiusrtgaencCeurrraetniot

8.3

ms

single

half

sine-wave

15.4

0.8IFSM

22

1.0

sTufyTppeicriaml pTohseT(eVrrdmaOona=nsl -iRrt1aioe0tensVdis,flrtIoeaOa=nqdc5ue(meJnE(ANcD,yoEft=eC12m0)0eMthHodz))

--- 250

RΘJA

Typical Junction Capacitance (Note 1)

CJ

28.6 K¡

1.2

--- MHz

30

40

.016(0.40)

120 .008(0.20)

Operating Temperature Range

TJ

-55 to +125

-55 to +150

Storage Temperature Range

TSTG

Dime-n6si5ontos+in17in5ches and (millimeters)

CHARACTERISTICS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM1S60u-MgHgFeMs1t8e0d-MHSFoMld11e0r0-MH FM1150-MH FM1200-MH

Maximum Forward Voltage at 1.0A DC

VF

Maximum Average Reverse Current at

@*TMA=a2r5k℃ing:

15

IR

Rated DC Blocking Voltage

@T A=125℃

0.50

0.70 Pad Lay0o.8u5t

0.9

0.92

00..750

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

0.90

1.90 mm

0.65

0.65

2012-06

2012-0

WILLAS ELECTRONIC COR

WILLAS ELECTRONIC CORP.

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