SMD Type
MOSFET
Complementary Trench MOSFET
AO4616 (KO4616)
■ P-Channel Typical Characterisitics
10
VDS=-15V
ID=-7A
8
6
4
2
0
0
5
Qg 1(n0C)
15
20
Figure 7: Gate-Charge Characteristics
1600
1400
1200
Ciss
1000
800
600
400
Coss
200
Crss
0
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
RDS(ON)
limited
0.1
TJ(Max)=150°C
DC
TA=25°C
10µs
100µs
1ms
10ms
10s
0.0
0.01
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
100
TA=25°C
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
0.001
0.00001
0.0001
0.001
0.01
0.1
Ton
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1000
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