KTA1666 View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name

Description

Manufacturer

KTA1666

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

PNP Silicon Epitaxial Planar Transistor

KTA1666

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0

-50

V

Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO IE=-1mA,IC=0

-5

V

Collector cut-off current

Emitter cut-off current

ICBO

VCB=-50V,IE=0

IEBO

VEB=-5V,IC=0

-0.1 μA

-0.1 μA

DC current gain

VCE=-2V,IC=-500mA

70

hFE

VCE=-2V,IC=-1.5A

40

Collector-emitter saturation voltage VCE(sat) IC=-1A, IB= -50mA

Base-emitter saturation voltage

VBE(sat)

IC=-1A, IB= -50mA

240

-0.5 V

-1.2 V

Transition frequency

fT

VCE=-2V, IC= -0.5A

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

40

pF

CLASSIFICATION OF hFE(1)

Rank

O

Range

70-140

MARKING

WO

Y

120-240

WY

E001

Rev.A

www.gmicroelec.com

2

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