BD644 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BD644 Datasheet PDF : 2 Pages
| |||
^E.mi-Conducto'i t-Pioduati,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD644
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -45V(Min)
• High DC Current Gain
: hFE= 750(Min) @lc= -3A
• Low Saturation Voltage
• Complement to Type BD643
APPLICATIONS
• Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
~8
A
ICP
Collector Current-Peak
-12
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25°C
PC
Collector Power Dissipation
@ TC=25'C
Tj
Junction Temperature
Tslg
Storage Temperature Range
-0.3
A
2
W
62.5
150
'C
-65-150
•c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
2
Thermal Resistance,Junction to Ambient 62.5
'C/W
•c/w
IP
I
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mm
DIW M!N MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
u 6.45 6.65
V 8.66 8.86
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