BDW93C View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BDW93C Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
BDW93
CONDITIONS
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDW93A
BDW93B
BDW93C
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 5A; IB= 20mA
VcE(sat)-2 Collector-Emitter Saturation Voltage IC=10A;IB=0.1A
VBE(sat)-1 Base-Emitter Saturation Voltage
lc= 5A; IB= 20mA
VBE(sat)-1 Base-Emitter Saturation Voltage
lc= 10A;IB=0.1A
BDW93
VCB= 45V; IE= 0
Collector
Icso
Cutoff Current
BDW93A
BDW93B
VCB= 60V; IE= 0
VCB= 80V; IE= 0
BDW93C VCB=100V;IE=0
BDW93
VCE= 45V; IB= 0
Collector
ICEO
Cutoff Current
BDW93A
BDW93B
VCE= 60V; IB= 0
VCE= 80V; IB= 0
BDW93C VCE= 100V; IB=0
IEBO
Em itter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc= 3A; VCE= 3V
hpE-2
DC Current Gain
lc= 5A; VCE= 3V
hpE-3
DC Current Gain
lc=10A;VCE=3V
VECF-I C-E Diode Forward Voltage
IF=5A
VECF-2 C-E Diode Forward Voltage
IF= 10A
BDW93/A/B/C
MIN TYP. MAX UNIT
45
60
V
80
100
2.0
V
3.0
V
2.5
V
4.0
V
0.1
mA
1.0
mA
1000
750
100
2.0
mA
20000
2.0
V
4.0
V
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