BDX53F View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BDX53F Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDX53F
DESCRIPTION
• Collector Current -lc= 8A
• High DC Current Gain-
: hFE= 500(Min)@ lc= 2A
• Complement to Type BDX54F
APPLICATIONS
• Designed for use in power linear and switching applications.
R1
PIN 1.BASE
2.COLLECTOR
3 EMITTER
TO-220C package
ABSOLUTE MAXIMUM RATINGS(Ta=25x:)
SYMBOL
PARAMETER
VALUE
VCER Collector-Emitter Voltage
160
VCEO Collector-Emitter Voltage
160
VEBO Emitter-Base Voltage
5
Ic
Collector Current-Continuous
8
ICM
Collector Current-Peak
12
le
Base Current-Continuous
0.2
Collector Power Dissipation
PC
@ TC=25"C
60
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65-150
UNIT
V
V
V
A
A
A
W
°C
°c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth J-c Thermal Resistance, Junction to Case
2.08 •c/w
Rth j-a Thermal Resistance, Junction to Ambient 70 'CM/
BH
V
vt
•Hh-s
soi- •so*
i|-U-L
Irr.
h-
=l
mm
DIM MIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
0 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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