BDW43 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BDW43 Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
BDW43
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 30mA; IB= 0
VcE(sat)-! Collector-Emitter Saturation Voltage lc=5A;lB=10mA
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 10A;lB=50mA
VBE(OR) Base-Emitter On Voltage
lc=10A;VCE=4V
120
V
2.0
V
3.0
V
3.0
V
ICBO
Collector Cutoff Current
VCB=120V;IE=0
1.0
mA
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc= 5A; VCE= 4V
1000
hFE-2
DC Current Gain
lc=10A;VCE=4V
250
fi
Current-Gain—Bandwidth Product
lc=3A;VcE=3V;ftest=1MHz
4
COB
Output Capacitance
IE= 0; VCB= 10V; f,es,= 0.1MHz
2.0
mA
2.0
mA
MHz
200
pF
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