BDW48 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

BDW48

Silicon PNP Darlington Power Transistor

New Jersey Semiconductor 

*j

, Unc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Darlington Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

BDW48

DESCRIPTION

• Collector-Emitter Sustaining Voltage-

:VCEo(sus)=-120V(Min)

• High DC Current Gain

: hFE=1000(Min)@lc=-5A

• Low Collector Saturation Voltage

: VCE(sa.)= -2.0V(Max.)@ lc= -5.0A

= -3.0V(Max.)@lc=-10A

• Complement to Type BDW43

APPLICATIONS

• Designed for general purpose and low speed switching

applications

i y-> "

Wi

123

PIN 1.BASE

2.COLLECTOR

3.MTTER

TO-220C package

ABSOLUTE MAXIMUM RATINGS(Ta=25-Q)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-120

V

VCEO Collector-Emitter Voltage

-120

V

VEBO Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

IB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25°C

Tj

Junction Temperature

Tstg

Storage Temperature Range

-15

A

-0.5

A

85

W

150

'C

-55-150

'C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance.Junction to Case

MAX UNIT

1.47 'C/W

mm

DIM MIN MAX

A 15.70 15.90

B 9.90 10.10

C 4.20 4.40

D 0.70 0.90

F 3.40 I 3.60

G 4.98 5.18

H 2.70 2.90

J 0.44 0.46

K 13.20 13.40

L 1.10 1.30

Q 2.70 2.90

R 2.50 2.70

S 1.29 1.31

LI 6.45 6.65

V 8.66 8.86

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Infonnation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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