BDW48 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BDW48 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
BDW48
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -30mA; IB= 0
VcE(sat)-i Collector-Emitter Saturation Voltage lc=-5A;lB=-10mA
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= -1OA; IB= -50mA
VsE(on) Base-Emitter On Voltage
lc=-10A;VCE=-4V
-120
V
-2.0
V
-3.0
V
-3.0
V
IcBO
Collector Cutoff Current
VCB=-120V; IE=0
-1.0 mA
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hpE-1 DC Current Gain
hFE-2
DC Current Gain
fl
Current-Gain—Bandwidth Product
COB
Output Capacitance
VCE= -60V; IB= 0
VEB= -5V; lc= 0
lc=-5A;VCE=-4V
1000
lc= -1 OA ; VCE= -4V
250
lc= -3A; VCE= -3V; f,es,= 1 MHz 4
lE=0;VcB=-10V;ftest=0.1MHz
-2.0 mA
-2.0 mA
MHz
300
pF
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