BLV10 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

BLV10

VHP power transistor

New Jersey Semiconductor 

VHP power transistor

BLV10

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (VBE - 0)

peak value

Collector-emitter voltage (open base)

Emitter-base voltage (open collector)

Collector current (average)

Collector current (peak value); f > 1 MHz

R.F. power dissipation (f > 1 MHz); Tmb = 25 °C

Storage temperature

Operating junction temperature

VCESM

VCEO

VEBO

IC(AV)

ICM

Pit

Tstg

T,

max.

36 V

max. 18 V

max.

4V

max. 1,5 A

max. 4,0 A

max.

20 W

-65 to + 150 'C

max. 200 C

1.75

'C

(A)

1.5

\h

^\ 70\"C^

1.25

MGP248

—i

1

075

05

C

N.

X \s \mb-25°C

=]—

10

15

20

VCE 'v>

0

100

I Continuous d.c. operation

II Continuous r.f. operation

III Short-time operation during mismatch

Fig.2 D.C. SOAR.

Fig.3 R.F. power dissipation;

V c E ^ 1 6 , 5 V ; f > 1 MHz.

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