M2V56S20ATP-7 View Datasheet(PDF) - MITSUBISHI ELECTRIC

Part Name

Description

Manufacturer

M2V56S20ATP-7

256M Synchronous DRAM

MITSUBISHI ELECTRIC  

SDRAM (Rev.1.31)

Single Data Rate

Apr. '02

MITSUBISHI LSIs

M2V56S20/ 30/ 40 ATP

M2V56S20/ 30/ 40 AKT

256M Synchronous DRAM

[ Write with Auto-Precharge Interrupted by Write / Read to Different Bank ]

Burst write with auto-precharge can be interrupted by write or read to different bank. Next ACT

command can be issued after (BL+tWR-1+tRP) from the WRITEA. Auto-precharge interruption by a

command to the same bank is inhibited.

WRITEA Interrupted by WRITE to Different Bank (BL=4)

CLK

Command

Write

Write

BL

A0-9,11-12

Ya

Yb

tWR

A10

1

0

ACT

tRP

Xa

Xa

BA0-1

00

10

00

DQ

Da0 Da1 Db0 Db1 Db2 Db3

auto-precharge interrupted

precharge

activate

WRITEA Interrupted by READ to Different Bank (CL=2, BL=4)

CLK

Command

Write

Read

BL

A0-9,11-12

Ya

Yb

tWR

A10

1

0

ACT

tRP

Xa

Xa

BA0-1

00

10

00

DQ

Da0 Da1

Qb0 Qb1 Qb2 Qb3

auto-precharge interrupted

precharge

activate

MITSUBISHI ELECTRIC

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