BSP254A View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

BSP254A

P-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

P-channel enhancement mode vertical

D-MOS transistor

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134)

SYMBOL

−VDS

V GSO

−ID

−IDM

Ptot

Tstg

Tj

PARAMETER

drain-source voltage

gate-source voltage

drain current

drain current

total power dissipation

storage temperature range

junction temperature

CONDITIONS

open drain

DC

peak value

Tamb = 25 °C (note 1)

THERMAL RESISTANCE

SYMBOL

PARAMETER

Rth j-a

from junction to ambient (note 1)

Note

1. Transistor mounted on printed circuit board, maximum lead length 4 mm,

mounting pad for drain lead minimum 10 mm x 10 mm.

Product specification

BSP254; BSP254A

MIN.

−

−

−

−

−

−65

−

MAX.

250

20

0.2

0.6

1

+150

150

UNIT

V

V

A

A

W

°C

°C

MAX. UNIT

125

K/W

handbook1, .h2alfpage

Ptot

(W)

0.8

MRC238

0.4

0

0

50

100

150

200

Tamb (°C)

Fig.2 Power derating curve.

April 1995

3

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